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| 2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C Tj Tstg 1 2SC1212 50 50 4 1 0.75 8 150 -55 to +150 2SC1212A 80 80 4 1 0.75 8 150 -55 to +150 Unit V V V A W W C C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25C) 2SC1212 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SC1212A Max -- -- -- 5 200 -- 1.0 1.5 -- Min 80 80 4 -- 60 20 -- -- -- Typ -- -- -- -- -- -- 0.65 0.75 160 Max -- -- -- 5 200 -- 1.0 1.5 -- V V MHz Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 mA VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 mA I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 mA Min 50 50 4 -- 60 20 -- -- -- Typ -- -- -- -- -- -- 0.65 0.75 160 DC current tarnsfer ratio hFE* hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product f T Note: B 60 to 120 1. The 2SC1212 and 2SC1212A are grouped by h FE as follows. C 100 to 200 2 2SC1212, 2SC1212A 3 2SC1212, 2SC1212A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 |
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